sot323 silicon epitaxial schottky barrier diodes issue 1? december 1998 features: low v f & high current capability applications : psu, mobile telecomms & scsi absolute maximum ratings. parameter symbol value unit continuous reverse voltage v r 30 v forward current i f 200 ma forward voltage @ i f =10ma v f 400 mv repetitive peak forward current i frm 300 ma non repetitive forward current t<1s i fsm 600 ma power dissipation at t amb =25c p tot 330 mw storage temperature range t stg -55 to +150 c junctiontemperature t j 125 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. reverse breakdown voltage v (br)r 30 50 v i r =10 a forward voltage v f 135 200 280 350 530 240 320 400 500 1000 mv mv mv mv mv i f =0.1ma i f =1ma i f =10ma i f =30ma i f =100ma reverse current i r 1.4 2 a v r =25v diode capacitance c d 7.5 10 pf f=1mhz,v r =1v reverse recovery time t rr 5 ns switched from i f =10ma to i r =10ma r l =100 ? , i r =1ma dual device; for simultaneous continuous use t j =100c. 1 3 2 3 1 1 32 zumd54 ZUMD54C single common cathode zumd54 ZUMD54C partmark: d8 partmark: d8c not recommended for new design please use bat54c
30 10 20 0 +125c +85c ta - ambient temperature ( c) pd v ta characteristics pd - power dissipation (mw) 0 90 180 270 330 ct v vr characteristics diode capacitance ct (pf) 0 5 10 15 0 50 100 150 forward voltage v f (v) if v vf characteristics forward current if (a) 00 . 6 0.3 +125c 10 100 1m 10m 100m 1 0.9 +85c +25c 0.15 0.45 0.75 10 100 10m 1m reverse current i r (a) reverse voltage v r (v) i r v v r characteristics reverse voltage vr (v) 02 0 10 30 1 +25c typical characteristics zumd54 ZUMD54C not recommended for new design please use bat54c
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